The semiconductor vertical external cavity surface emitting laser pumped by light (OPS-VECSEL) is a diode pumped solid state laser with a semiconductor multi-quantum well gain medium. Recently as a new harvest of the bandgap engineering of the semiconductor, OPS-VECSEL is a promising candidate of a high quality laser in science research and industry process. OPS-VECSEL has shown some excellence in power beam quality and structure. The disk about 2 thickness and 5×5 mm area of OPS-VECSEL material gain avoids thermo-optic effects in the crystal rod. Its resonant periodic gain (RPG) structure enhances the stimulated emission section and the distributed bragg reflector (DBR )，which is also a epitaxy stack on the RPG and reduces loss of the optical resonator. Compared OPS-VECSEL to solid-state lasers, the new type of laser may provide significantly increased wavelength variability by material selection and bandgap engineering of the semiconductor. It overcomes the limitation of conventional electricity pumped edge-or/and surface- emitting semiconductor lasers and can offer either near diffraction limited fundamental mode or TEM₀₁mode.